NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25Ω Rds(on) SOT-23 1.8V Logic Level -55°C to +150°C
Features
1.3 A, 20 V
RDS(on) = 0.21 @ VGS = 2.7 V
RDS(on) = 0.16 @ VGS = 4.5 V
Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary SUPERSOT −3 Design for Superior Thermal and Electrical Capabilities
High Density Cell Design for Extremely Low RDS(on)
Exceptional On−Resistance and Maximum DC Current Capability
This is a Pb−Free Device
General Description
These N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.
APPLICATIONS
Portable Electronics
Load switching: Power management in smartphones, TWS earphones
Battery Protection: Acts as switch in charge/discharge paths (supports 1.6A continuouscurrent).
Low-Power DC-DC Conversion
Synchronous Rectification: Paired with Buck/Boost chips (e.g., TPS61093) to improveefficiency via 0.250 Rds(on).
Level shifting: Compatible with 1.8V/3.3V/5V logic systems for signal isolation.
Sensor & Signal Processing
Sensor Power switching: Energy-saving control for temp/humidity sensors, optical modules.
Analog switching: Replaces mechanical relays in low-voltage (<20V) signal paths.
Industrial Control
PLC l/O Interfaces: Drives LEDs or small relays (requires flyback diode).
Low-Side Switching: Controls fans, small motors, etc.
INFORMATION
| Category | | |
| Mfr | | |
| Series | | |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
| Part Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Grade | | |
| Qualification | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
Drawing
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NDS331N 20V N-Channel MOSFET 1.6A Continuous 0.25Ω Rds(on) SOT-23 1.8V Logic Level -55°C to +150°C Images
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